G40N60UFD Ultra-Fast IGBT Vceo=600V, Ic=80A, Pmax=290W

TransistorSKU: 40N60

$ 4.95


G40N60UFD Ultra-Fast IGBT Vceo=600V, Ic=80A, Pmax=290W. Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses. Using IGBT technology, Fairchild Semiconductor's field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.

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