N-Channel Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology, Lower Input Capacitance, Improved Gate Charge, Extended Safe Operating Area, 4A operation, Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on)
The product datasheet is available here to view
Payment & Security
Your payment information is processed securely. We do not store credit card details nor have access to your credit card information.